Semiconductor memory device with a delay locked loop circuit and a method for controlling an operation thereof

ABSTRACT

An operation control method of a semiconductor memory device includes executing a Delay Locked Loop (DLL) locking in response to a DLL reset signal and measuring a loop delay of a DLL. The operation control method further includes storing measured loop delay information and DLL locking information; and performing a delay control of a command path using the stored loop delay information and DLL locking information independent of the DLL, during a latency control operation.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application claims priority under 35U.S.C. §119 to U.S. provisional patent application No. 61/806,663 filedon Mar. 29, 2013, to U.S. provisional patent application No. 61/806,669filed on Mar. 29, 2013, and to Korean Patent Application No.10-2013-0073986 filed Jun. 26, 2013, in the Korean Intellectual PropertyOffice, the disclosures of which are incorporated by reference herein intheir entireties.

TECHNICAL FIELD

The present inventive concept relates to a semiconductor memory devicewith a delay locked loop circuit.

DISCUSSION OF RELATED ART

in general, a semiconductor memory device utilizes a clock as areference signal for adjusting operation timing.

When a semiconductor memory device uses an externally applied clock, atime delay (or, a clock skew) arises due to the device's internalcircuits. A circuit that adjusts the time delay such that an internalclock has the same phase as that of the externally applied clock is aDelay Locked Loop (DLL) circuit.

Since clock synchronization is required for application of a readlatency operation and an On-Die Termination (ODT) technique to a DoubleData Rate Synchronous Dynamic Random Access Memory (DDR SDRAM), the DLLcircuit is embedded in a synchronous DRAM.

As an operation of a synchronous semiconductor memory device is sped up,a DLL circuit with a robust jitter characteristic is used. In this case,however, the DLL circuit may consume a lot of power.

SUMMARY

An exemplary embodiment of the inventive concept provides an operationcontrol method of a semiconductor memory device, which comprisesexecuting a Delay Locked Loop (DLL) locking in response to a DLL resetsignal; measuring a loop delay of a DLL; storing measured loop delayinformation and DLL locking information; performing a delay control of acommand path using the stored loop delay information and DLL lockinginformation independent of the DLL, during a latency control operation.

In exemplary embodiments of the inventive concept, the DLL comprises aclock path, wherein the command path and the clock path are drivenindependently from each other.

In exemplary embodiments of the inventive concept, the loop delayinformation is used to determine an additive delay of an additive delayline included in the command path.

In exemplary embodiments of the inventive concept, the DLL lockinginformation is used to determine a DLL delay of a delay line replicathat is connected to an output of the additive delay line and whereinthe delay line replica has the same delay as that of a delay line of theDLL.

In exemplary embodiments of the inventive concept, a latency valueapplied through the command path is used to determine the additivedelay.

In exemplary embodiments of the inventive concept, the loop delay ismeasured by counting a feedback clock applied to a phase detector of theDLL within an interval.

In exemplary embodiments of the inventive concept, a number of risingedges of the feedback clock are counted.

An exemplary embodiment of the inventive concept provides an operationcontrol method of a semiconductor memory device, which comprisesexecuting a DLL locking in response to a DLL reset signal; measuring aloop delay of a DLL; storing measured loop delay information and DLLlocking information; during an On-Die Termination (ODT) controloperation, performing a delay control of a command path using the storedloop delay information and DLL locking information when the DLL is off.

In exemplary embodiments of the inventive concept, the DLL reset signalis applied at a power-up of a semiconductor memory device.

In exemplary embodiments of the inventive concept, the ODT controloperation is performed when a latency command is received.

In exemplary embodiments of the inventive concept, the loop delay ismeasured by counting a result obtained by comparing a feedback clock ofthe DLL and an input clock of a DLL delay line within an interval.

In exemplary embodiments of the inventive concept, a number of fallingedges of the feedback clock are counted.

In exemplary embodiments of the inventive concept, the loop delayinformation is used to determine an additive delay of an additive delayline included in the command path, together with an ODT control valueapplied through the command path.

In exemplary embodiments of the inventive concept, the DLL lockinginformation is used to determine a DLL delay of a delay line replicathat is connected to an output of the additive delay line and whereinthe delay line replica has the same delay as that of a delay line of theDLL.

An exemplary embodiment of the inventive concept provides asemiconductor memory device which comprises a DLL configured to executea DLL locking at a DLL reset; a DLL control part configured to controlthe DLL and store DLL locking information at a DLL locking; a loop delaymeasure circuit configured to measure and store a loop delay of the DLL;and a command path unit including an additive delay line configured todetermine an additive delay in response to the loop delay information,and a delay line replica having the same delay as that of a delay lineof the DLL and configured to determine a DLL line delay in response tothe DLL locking information, wherein during a latency control operation,a delay control of the command path unit is performed using the storedloop delay information and DLL locking information independent of theDLL.

In exemplary embodiments of the inventive concept, the DLL comprises aDLL delay line configured to delay an input clock according to a delayselection signal; a data output buffer replica having the same delay asa delay of a data output buffer and configured to receive an outputclock of the DLL delay line; a clock buffer replica having the samedelay as a delay of a clock buffer and configured to receive an outputbuffer clock from the data output buffer replica; and a phase detectorconfigured to generate a phase error detection signal by comparing theinput clock with a feedback clock from the clock buffer replica.

In exemplary embodiments of the inventive concept, the DLL control partcontrols the DLL in response to the phase error detection signal andlatches the delay selection signal as the DLL locking information at theDLL locking.

In exemplary embodiments of the inventive concept, the loop delaymeasure circuit measures the loop delay of the DLL by counting a resultobtained by comparing the feedback clock and the input clock within aninterval.

In exemplary embodiments of the inventive concept, the loop delaymeasure circuit comprises a counting circuit configured to count aresult obtained by comparing the feedback clock and the input clockwithin an interval; a decoder configured to decode the count result; andan adder configured to generate the additive delay information using adecoding output value of the decoder and a latency value.

In exemplary embodiments of the inventive concept, the command path unitfurther comprises a command buffer; and a command decoder connectedbetween the command buffer and the additive delay line.

In exemplary embodiments of the inventive concept, the DLL is poweredoff during an operation of the command path unit.

In exemplary embodiments of the inventive concept, the command path unitis activated during the latency control operation and the DLL isinactivated during standby and access operation modes of thesemiconductor memory device.

In exemplary embodiments of the inventive concept, an update period ofthe DLL is a value obtained by adding at least two or more clocks to aloop delay measurement value N at a coarse locking operation.

In exemplary embodiments of the inventive concept, an update period ofthe DLL is a value obtained by adding at least one or more clocks to aloop delay measurement value N at a fine locking operation.

In exemplary embodiments of the inventive concept, the latency controloperation is a data read latency control of the semiconductor memorydevice.

An exemplary embodiment of the inventive concept provides asemiconductor memory device which comprises a DLL configured to executea DLL locking at a DLL reset; a DLL control part configured to controlthe DLL and store DLL locking information at a DLL locking; a loop delaymeasure circuit configured to measure and store a loop delay of the DLL;and a command path unit including an additive delay line configured todetermine an additive delay in response to the loop delay information,and a delay line replica having the same delay as that of a delay lineof the DLL and configured to determine a DLL line delay in response tothe DLL locking information, wherein during an on-die terminationcontrol operation, a delay control of the command path unit is performedusing the stored loop delay information and DLL locking information whenthe DLL is off.

In exemplary embodiments of the inventive concept, an update period ofthe DLL is a value obtained by adding at least two or more clocks to aloop delay measurement value N at a coarse locking operation or a valueobtained by adding at least one or more clocks to the loop delaymeasurement value N at a fine locking operation.

In exemplary embodiments of the inventive concept, the DLL comprises aDLL delay line configured to delay an input clock according to a delayselection signal; a data output buffer replica having the same delay asa delay of a data output buffer and configured to receive an outputclock of the DLL delay line; a clock buffer replica having the samedelay as a delay of a clock buffer and configured to receive an outputbuffer clock from the data output buffer replica; and a phase detectorconfigured to generate a phase error detection signal by comparing theinput clock with a feedback clock from the clock buffer replica.

In exemplary embodiments of the inventive concept, the loop delaymeasure circuit comprises a counting circuit configured to count aresult obtained by comparing the feedback clock and the input clockwithin an interval; a decoder configured to decode the count result; andan adder configured to generate the additive delay information using adecoding output value of the decoder and an input extended mode registerset (EMRS) value.

An exemplary embodiment of the inventive concept provides asemiconductor memory device which comprises a DLL configured to performa locking operation; and a command path unit including a first delayunit configured to determine an additive delay in response to loop delayinformation of the DLL and a second delay unit configured to determine aline delay of the DLL in response to locking information of the DLL,wherein the DLL is powered off during execution of a command using thecommand path unit.

BRIEF DESCRIPTION OF THE FIGURES

The above and other features of the inventive concept will become moreclearly understood by describing in detail exemplary embodiments thereofwith reference to the accompanying figures, in which;

FIG. 1 is a block diagram illustrating a semiconductor memory deviceincluding a delay locked loop circuit according to an exemplaryembodiment of the inventive concept;

FIG. 2 is a block diagram illustrating a loop delay measure circuitshown in FIG. 1, according to an exemplary embodiment of the inventiveconcept;

FIG. 3 is a diagram of a freezer circuit shown in FIG. 1, according toan exemplary embodiment of the inventive concept;

FIG. 4 is an operation timing diagram according to an exemplaryembodiment of the inventive concept;

FIG. 5 is an operation flow chart according to an exemplary embodimentof the inventive concept;

FIG. 6 is a block diagram illustrating a semiconductor memory deviceincluding a delay locked loop circuit according to an exemplaryembodiment of the inventive concept;

FIG. 7 is a diagram illustrating a delay locked loop circuit controlpart according to an exemplary embodiment of the inventive concept;

FIG. 8 is an operation flow chart associated with FIG. 6 according to anexemplary embodiment of the inventive concept;

FIG. 9 is a block diagram illustrating a memory system including asemiconductor memory device like that shown in FIG. 1 according to anexemplary embodiment of the inventive concept;

FIG. 10 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to a mobile device;

FIG. 11 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to an optical input/output (I/O) scheme;

FIG. 12 is a diagram illustrating an exemplary embodiment of theinventive concept applied to a through-silicon via (TSV);

FIG. 13 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to an electronic system;

FIG. 14 is a diagram illustrating a semiconductor wafer according to anexemplary embodiment of the inventive concept; and

FIG. 15 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to a portable device.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, exemplary embodiments of the inventive concept will bedescribed in detail with reference to the accompanying drawings. Theinventive concept, however, may be embodied in various different forms,and should not be construed as being limited only to the illustratedembodiments. Like reference numerals may denote like elements throughoutthe attached drawings and written description. In the drawings, thesizes and relative sizes of layers and regions may be exaggerated forclarity.

As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to”, “coupled to”, or “adjacent to” anotherelement or layer, it can be directly on, connected, coupled, or adjacentto the other element or layer, or intervening elements or layers may bepresent.

FIG. 1 is a block diagram illustrating a semiconductor memory device 100including a delay locked loop circuit according to an exemplaryembodiment of the inventive concept.

Referring to FIG. 1, there are illustrated circuit blocks associatedwith a clock path unit 129 and a command path unit 119 of thesemiconductor memory device 100.

The clock path unit 129 includes a delay locked loop circuit(hereinafter, referred to as ‘DLL’).

At a reset operation of the DLL, the DLL that executes a DLL lockingincludes a DLL delay line 124 to delay an input clock DCLK according toa delay selection signal SEL1; a data output buffer replica 134 havingthe same delay as that of a data output buffer 126 and to receive anoutput clock OCLK of the DLL delay line 124; a clock buffer replica 136having the same delay as that of a clock buffer 120 and to receive anoutput buffer clock from the data output buffer replica 134; and a phasedetector 130 to generate a phase error detection signal UP/DN bycomparing the input clock DCLK with a feedback clock FCLK from the clockbuffer replica 136.

The DLL delay line 124 may include a plurality of unit delays. One unitdelay is formed of two NAND gates and an inverter, for example. However,the inventive concept is not limited thereto. For example, a unit delaymay be implemented by various types of delay devices as well as aninverter delay.

To increase noise immunity, the DLL swings the input clock DCLK by acurrent mode logic (CML) level. To reduce power consumption, the DLLswings the input clock DCLK by a CML level.

Since a CML circuit for switching to the CML level has a differentialcircuit structure, its noise immunity is robust. In addition, since adynamic current component is not generated, it is possible to minimize anoise generated at a peripheral circuit.

A DLL control part 132 is controlled by the DLL and stores DLL lockinginformation at a DLL locking. The DLL control part 132 controls the DLLin response to the phase error detection signal UP/DN and latches thedelay selection signal SEL1 as DLL locking information at the DLLlocking.

A loop delay measure circuit 150 measures and stores a loop delay of theDLL.

The command path unit 119 includes an additive delay line 114 to decidean additive delay in response to the loop delay information; and a delayline replica 116 having the same delay as that of the delay line 124 ofthe DLL and to decide a DLL line delay in response to the DLL lockinginformation. The command path unit 119 further comprises a commandbuffer 110; and a command decoder 112 connected between the commandbuffer 110 and the additive delay fine 114.

A power to the clock path unit 129 including the DLL is interrupted whenthe command path unit 119 operates. The command path unit 119 isactivated when a latency control operation or an On-Die Termination(ODT) operation is controlled. The DLL is inactivated during standby andaccess operation modes of the semiconductor memory device 100. Thus,since a command is executed without dependence on the clock path unit129, power consumption is minimized or reduced by power-off of the DLL.

The latency control operation is a data read latency control operationof the semiconductor memory device 100.

During the ODT control operation or the latency control operation, adelay control of the command path unit 119 is independently performedusing the stored loop delay information and DLL locking information. Inother words, since replica circuit blocks respectively corresponding tothe DLL delay line 124 and the data output buffer 126 included in theclock path unit 129 are implemented within the command path unit 119(e.g., replicas 116 and 118), the DLL is powered off once a lockingoperation of the DLL is performed. As a result, in the event that acommand for a latency control operation is received under a conditionwhere the DLL is inactivated, output data whose latency is controlled bythe command path unit 119 may be provided to the outside of thesemiconductor memory device 100.

To perform the above-described operation, the loop delay measure circuit150 measures a loop delay of the DLL by counting a result obtainedthrough comparison of the feedback clock FOLK and the input clock DLCKwithin a particular window interval.

FIG. 2 is a block diagram illustrating the loop delay measure circuit150 shown in FIG. 1, according to an exemplary embodiment of theinventive concept.

Referring to FIG. 2, the loop delay measure circuit 150 includes acounting circuit 152, a decoder 154, and an adder 156.

The counting circuit 152 counts a result obtained through comparison ofa feedback clock FOLK and an input clock DCLK within a particular windowinterval to output a counting result value M<0:15>.

The decoder 154 decodes the counting result value M<0:15> to generate adecoding output value N<0:3>. The decoding output value N<0:3> may beloop delay information.

The adder 156 is implemented by a full adder and generates additivedelay information CONS of bits O<0:3> using the decoding output valueN<0:3> of the decoder 154 and a latency value or an ODT value L<0:3>provided through an extended mode register set (EMRS).

For example, an additive delay decided by the additive delay informationCONS is (CL−N). Here, ‘CL’ is a clock latency value and ‘N’ is a digitalcode value indicated by the loop delay information. If the clock latencyvalue is 9 and the loop delay value is 3, the additive delay is 6.

FIG. 3 is a diagram of a freezer circuit 122 shown in FIG. 1, accordingto an exemplary embodiment of the inventive concept.

Referring to FIG. 3, an AND gate 122 a performs an AND operation on abuffering clock BCLK provided through the clock buffer 120 and a startsignal START. The AND gate 122 a outputs an input clock DCLK as the ANDoperation result. The start signal START may be a signal applied to amemory controller, for example.

FIG. 4 is an operation timing diagram according to an exemplaryembodiment of the inventive concept.

Referring to FIG. 4, waveforms of a buffering clock BCLK, a start signalSTART, an input clock DCLK, and a feedback clock FCLK are exemplarilyshown.

The buffering clock BCLK is a clock signal output from the clock buffer120 shown in FIG. 1.

The start signal START is a signal applied to the freezer circuit 122shown in FIG. 1.

The input clock DCLK is an output clock signal output from the freezercircuit 122.

The feedback clock FCLK is a feedback clock signal output from the clockbuffer replica 136 shown in FIG. 1.

A loop delay is measured by comparing the input clock DCLK and thefeedback clock FCLK.

Assuming that a DLL is locked at t1, the start signal START maintains alow level for a window interval TF.

The counting circuit 152 shown in FIG. 2 counts the number of risingedges of the feedback clock FOLK during the window interval TF. In thecase of FIG. 4, the counting circuit 152 counts at t2 and t3,respectively. Thus, a loop delay may correspond to two clocks. If thecounting circuit 152 counts three times, a loop delay may correspond tothree clocks.

In FIG. 4, there is illustrated an embodiment where the counting circuit152 counts at a rising edge. However, the inventive concept is notlimited thereto. For example, the counting circuit 152 may count at afalling edge.

Further, as shown in FIG. 4, the input clock DCLK does not swing in aninterval TA due to a freezing function of the freezer circuit 122 andthen swings, at the end of the interval TA. In addition, the feedbackclock FOLK does not swing in an interval TB and then swings at t4.

Here, the interval TA is substantially the same as the interval TB.

FIG. 5 is an operation flow chart according to an exemplary embodimentof the inventive concept.

Below, an operation of the semiconductor memory device 100 of FIG. 1will be more fully described according to steps shown in FIG. 5.

In step S500, whether a DLL reset command is provided to thesemiconductor memory device 100 shown in FIG. 1 is determined. If it isdetermined that the DLL reset command is provided to the semiconductormemory device 100, the process proceeds to step S510. In step S510, acoarse locking operation of a DLL is executed.

Step S510 is a step where the DLL executes a coarse locking operation.If the coarse locking operation ends, in step S520, a fine lockingoperation is executed. In the coarse and fine locking steps, an externalclock ECLK applied to the clock buffer 120 shown in FIG. 1 is delayed bya delay of the clock buffer 120 and then appears at an output terminalof the clock buffer 120 as a buffering clock BCLK. In this case, since astart signal START has a logic high level, the buffering clock BCLKpasses through the freezer circuit 122 and is output as an input clockDCLK. In other words, a phase of the buffering clock BCLK issubstantially the same as that of the input clock DCLK.

For DLL locking, the DLL delay line 124 delays the input clock DCLK inresponse to a delay selection signal SEL1. An output clock OCLK of theDLL delay line 124 is applied to the data output buffer replica 134. Thedata output buffer replica 134 delays the output clock OCLK by a delayof the data output buffer 126 to generate an output buffer clock. Theoutput buffer clock is applied to the clock buffer replica 136. Theclock buffer replica 136 delays the output buffer clock by a delay ofthe clock buffer 120 to generate a feedback clock FOLK. The feedbackclock FOLK is applied to the phase detector 130. The phase detector 130compares a phase of the input clock DCLK and a phase of the feedbackclock FOLK to output a phase error detection signal UP/DN. The phaseerror detection signal UP/DN functions as a signal for shifting a phaseof the input clock DCLK ahead or back to correspond with a phase of thefeedback clock FOLK. The DLL control part 132 updates the delayselection signal SEL1 in response to the phase error detection signalUP/DN. At t1 shown FIG. 4, the phases of the input and feedback clocksDCLK and FOLK coincide through use of the above-described DLL lockingoperation. If the DLL locking operation is completed at t1, the DLLcontrol part 132 latches the delay selection signal SEL1 as DLL lockinginformation. As a result, the DLL locking information is a digital codevalue that is expressed by a particular bit number.

After the DLL locking is executed, in step S530, an operation ofmeasuring a loop delay is performed.

As illustrated in FIG. 4, the input clock DCLK has a low level in theinterval TA due to a clock freezing function of the freezer circuit 122.Further, the feedback clock FOLK is affected by the input clock DCLK andhas a waveform as shown in FIG. 4.

The loop delay measure circuit 150 shown in FIG. 1 counts the number ofrising edges of the feedback clock FOLK during the window interval TF ofFIG. 4. In the case of FIG. 4, since the number of rising edges is 2, aloop delay corresponding to two clocks is measured

If measurement of the loop delay ends, in step S540, DLL lockinginformation and loop delay information are latched. In theabove-described example, the loop delay measure circuit 150 stores aloop delay value of ‘2’ in an internal latch element.

That the DLL of the semiconductor memory device 100 is powered off afterthe loop delay is measured does not impact the process. In other words,step S550 is performed to reduce power consumed during a standbyoperation or a memory access operation (including a read operation and awrite operation).

Step S550 is step where DLL power-off is allowed. After the loop delayis measured, the semiconductor memory device 100 interrupts the power tothe clock path unit 129 including the DLL through an internal controlcircuit.

In case of the JEDEC standards, a time for updating a DLL atinitialization of a dynamic random access memory (DRAM) is set to 512clock cycles. In other words, a DLL locking operation has to becompleted within 512 clock cycles after power-up.

Steps S510 to S540 are performed during an initialization interval ofthe DRAM.

In other words, during the initialization interval. DLL lockinginformation and loop delay information are latched. If theinitialization interval elapses and a command for a memory accessoperation is received, a read latency operation or an ODT controloperation is carried out using the latched information independentlyfrom the DLL, in other words, without dependence on an operation of theDLL.

Afterwards, although a command for a memory operation is received froman external device, the command path unit 119 operates independentlywithout dependence on the clock path unit 129.

Step S560 is step where the command path unit 119 is used at receptionof a command.

For example, assuming that a command CMD having a read latency of ‘6’ isapplied to the command buffer 110, the command decoder 112 outputs acommand decoding signal CD corresponding to the input command. Theadditive delay line 114 delays the command decoding signal CD by anadditive delay to output an additive delay line output signal ADL.

Herein, the size of additive delay is decided according to additivedelay information CONS. For example, when a read latency is 9 and a loopdelay is 2, the additive delay is 7 (e.g., 9−2). Thus, the additivedelay line 114 delays the command decoding signal CD by an intervalcorresponding to six clocks and outputs the additive delay line outputsignal ADL. As a result, the size of additive delay is decided accordingto a loop delay measurement value of the DLL and a latency valuerequired by the external device.

Here, there is described an embodiment where the size of additive delayis added by a 1-clock unit. However, the inventive concept is notlimited thereto. For example, the additive delay line 114 is designedsuch that the size of additive delay can be added by a 0.5-clock unit.

The additive delay line output signal ADL is applied to the DLL delayline 116 that is installed within the command path unit 119. The DLLdelay line 116 is a replica of the DLL delay line 124 included in theclock path unit 129. In other words, the DLL delay line 116 generates areplica output clock ROCLK by delaying the additive delay line outputsignal ADL in response to a delay selection signal SEL2. The delayselection signal SEL2 is DLL locking information and is the same signalas a delay selection signal SEL1 stored during a DLL locking operation.Thus, the replica output clock ROCLK is a clock signal phase locked withan external clock signal ECLK and is a signal to which the read latencyof ‘0’ is reflected.

The data output buffer replica 118 outputs read data DOUT to theexternal device in response to the replica output clock ROCLK. Here, thereplica output clock ROCLK functions as a data output enable signal EN.

Thus, the read data DOUT is output in synchronization with the externalclock ECLK after a time corresponding to the read latency of ‘9’.

As described above, the read data DOUT is output to the external devicein response to the replica output clock ROCLK generated from the commandpath unit 119, without dependence on the clock path unit 129. If the DLLof the clock path unit 129 is powered off during a standby operation ora memory access operation, power consumption of the semiconductor memorydevice 100 is minimized or reduced.

A latency of a conventional DRAM is controlled based on a locking clockof the DLL. In other words, the DLL maintains an active state such thata command (e.g., a command corresponding to a data read operation or anODT operation) necessitating a latency is executed. In the case of, forexample, Double Data Rate (DDR) 1333, a current of about 3 mA isconsumed at a DLL operation. In embodiments of the inventive concept,since the DLL is powered off during a latency operation, power is notconsumed during a DLL operation.

Further, an ODT technique is used to improve signal integrity byminimizing signal reflection caused at an interface between a StubSeries Termination Logic (SSTL) based system and a memory.Conventionally, a termination voltage VTT is supplied from amotherboard. In the case of a Synchronous Dynamic Random Access Memory(SDRAM) having DDR2 or higher versions, a DRAM and a memory controllermay provide the termination voltage by using the ODT technique.

In accordance with an operation of FIG. 1, that the DLL is powered offdoes not impact the process when ODT latency is controlled. Like theabove description, the ODT is controlled by the replica output clockROCLK generated from the command path unit 119, without dependence onthe clock path unit 129. As a result, the DLL of the clock path unit 129is powered off during a standby operation or a memory access operation,and the ODT is controlled through the command path unit 119.

Below, there is described an embodiment where an update period of theDLL is optimally decided.

DLL locking may compensate for an asynchronous delay of a clock path. Aperiod of a DLL update is decided to be longer than a delay of the clockpath for accurate compensation of the asynchronous delay. In otherwords, an update cycle is set to be longer than a delay of the clockpath to secure a noise immunity characteristic.

Further, since ‘tDLLinit’ is defined as 512*tCC in the JEDEC standards,a DLL locking operation is terminated within 512 clock cycles. Thus, atrade-off exists between a bang-bang jitter characteristic and a lockingtime. In other words, a long update period is required to reduce abang-bang jitter, while a short update period is required to cope withpower noise quickly.

In exemplary embodiments of the inventive concept, an optimal updateperiod is decided after measurement of a loop delay of the clock path.The decided update period is larger than the measured loop delay and isdecided to have a value capable of securing the fastest updateoperation.

Since an update period is decided to have an optimal value regardless ofa variation in an operation frequency or voltage, an update perioddeciding method according to an exemplary embodiment of the inventiveconcept is robust to the bang-bang jitter and is effective to reduce alocking time.

FIG. 6 is a block diagram illustrating a semiconductor memory device 101including a delay locked loop circuit according to an exemplaryembodiment of the inventive concept.

Referring to FIG. 6, there are shown circuit blocks associated with aclock path unit 129 of the semiconductor memory device 101.

The clock path unit 129 includes a DLL.

The DLL executing a DLL locking includes a DLL delay line 124 to delayan input clock DCLK according to a delay selection signal SELn; a dataoutput buffer replica 134 having the same delay as that of a data outputbuffer 126 and to receive an output clock OCLK of the DLL delay line124; a clock buffer replica 136 having the same delay as that of a clockbuffer 120 and to receive an output buffer clock from the data outputbuffer replica 134; and a phase detector 130 to generate a phase errordetection signal UP/DN by comparing the input clock DCLK with a feedbackclock FCLK from the clock buffer replica 136.

The DLL delay line 124 includes a plurality of unit delays. One unitdelay is formed of two NAND gates and an inverter, for example. However,the inventive concept is not limited thereto. For example, a unit delaymay be implemented by various types of delay devices as well as aninverter delay.

To increase noise immunity, the DLL swings the input clock DCLK by a CMLlevel. To reduce power consumption, the DLL swings the input clock DCLKby a CML level.

A DLL control part 133 is controlled by the DLL and stores DLL lockinginformation at a DLL locking. The DLL control part 133 controls the DLLin response to the phase error detection signal UP/DN and latches thedelay selection signal SELn as DLL locking information at the DLLlocking.

A loop delay measure circuit 150 measures and stores a loop delay of theDLL. The loop delay measure circuit 150 generates an update periodcontrol signal CONS using the measured loop delay information. Theupdate period control signal CONS is applied to the DLL control part133.

To decide the update period control signal CONS, the loop delay measurecircuit 150 counts a result obtained by comparing the feedback clockFOLK and the input clock DCLK within a particular window interval andmeasures a loop delay of the DLL.

The loop delay measure circuit 150 measures a loop delay using thecounting circuit 152 shown in FIG. 2. The counting circuit 152 outputs acounting result value M<0:15> by comparing the feedback clock FCLK andthe input clock DCLK within a particular window interval.

The loop delay measure circuit 150 measures a loop delay as describedwith reference to FIG. 4.

Returning to FIG. 4, assuming that the DLL is locked at t1, the startsignal START maintains the low level for the window interval TF and thecounting circuit 152 counts the number of rising edges of the feedbackclock FCLK during the window interval TF. In the case of FIG. 4, a loopdelay measured may correspond to two clocks.

After measuring the loop delay, the loop delay measure circuit 150 addsa delay corresponding to one clock period or two clock periods to theloop delay measured to finally decide the update period control signalCONS. In other words, assuming that the size of the loop delay is N, theupdate period is (N+1) or (N+2). If the loop delay is decided asdescribed above, a bang-bang jitter is minimized and the fastest updateoperation is secured.

The loop delay measure circuit 150 provides the update period controlsignal CONS to a ring counter configured as illustrated in FIG. 7.

FIG. 7 is a diagram illustrating the DLL control part 133 according toan exemplary embodiment of the inventive concept.

A ring counter 133 a shown in FIG. 7 is a circuit block included in theDLL control part 133. The ring counter 133 a performs a countingoperation in response to a phase error detection signal UP/DN and anupdate period control signal CONS. The update period control signal CONSis used to decide a counting operation frequency of the ring counter 133a. The DLL update control part 133 updates a DLL locking in response toa counting output CNTO of the ring counter 133 a.

In FIG. 6, there is described an embodiment where the loop delay measurecircuit 150 decides the update period control signal CONS. However, theloop delay measure circuit 150 only provides loop delay information tothe DLL control part 133, and the DLL control part 133 finally decidesan update period of the DLL.

FIG. 8 is an operation flow chart associated with FIG. 6, according toan exemplary embodiment of the inventive concept.

Below, an operation of FIG. 6 is described according to steps shown inFIG. 8.

In step S800, whether a DLL reset command is applied to thesemiconductor memory device 101 shown in FIG. 6 is determined. If theDLL reset command is applied, the process proceeds to step S810 where aloop delay of the DLL is measured.

In step S810, the loop delay measure circuit 150 illustrated in FIG. 6measures a loop delay. The input clock DCLK has a low level during theinterval TA (refer to FIG. 4) due to a clock freezing function of afreezer circuit 122 shown in FIG. 6. Further, the feedback clock FCLK isaffected by the input clock DCLK, so that it has a waveform shown inFIG. 4. The loop delay measure circuit 150 illustrated in FIG. 6 countsthe number of rising edges of the feedback clock FOLK during the windowinterval TF shown in FIG. 4. In the case of FIG. 4, since the number ofrising edges is 2, a loop delay corresponding to two clocks is measured

Step S820 is passed when the DLL executes a coarse locking operation. Inthe event that the DLL executes the coarse locking operation, in stepS840, an update period UDP is decided as a value more than (N+2). Here,‘N’ is a value of the measured loop delay.

Meanwhile, step S830 is passed when the DLL executes a fine lockingoperation. In the event that the DLL executes the fine lockingoperation, in step S850, the update period UDP is decided as a valuemore than (M+1). Here, ‘M’ is a value of the measured loop delay.

If an update period is decided during the coarse locking operation orthe fine locking operation, a DLL update operation is accomplishedthrough execution of step S860.

As described above, although an operation frequency or voltage ischanged, an update period is set to an optimal value through an updateperiod deciding method of FIG. 6. Thus, the update period decidingmethod is robust to a bang-bang jitter and is effective to reduce alocking time.

FIG. 9 is a block diagram illustrating a memory system including asemiconductor memory device like that shown in FIG. 1 according to anexemplary embodiment of the inventive concept.

Referring to FIG. 9, a memory system may include a memory controller2000 and a DRAM 1000. The DRAM 1000 is connected to the memorycontroller 2000 through a system bus B1 to receive data, an address, anda command. The DRAM 1000 provides the memory controller 2000 with dataread from memory cells through the system bus B1.

The memory controller 2000 is connected to a host (not shown) through aparticular interface.

The DRAM 1000 includes a delay locked loop (DLL) circuit 103 having acircuit configuration like the delay locked loop circuit shown in FIG.1.

In the memory system, the DRAM 1000 may include a clock path unit havinga delay locked loop circuit and a command path unit operatingindependently from the clock path unit. Therefore, the delay locked loopcircuit is powered off during a standby operation or an accessoperation. Thus, power consumption of the memory system is minimized orreduced. In addition, a jitter-robust and fast update operation isexecuted by deciding an optimal update period of the delay locked loopcircuit. Thus, the reliability of the memory system including the DRAM1000 is increased and power consumption is reduced.

FIG. 10 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to a mobile device.

Referring to FIG. 10, the mobile device may be a notebook computer or ahandheld electronic device, and includes a DRAM 1000, a micro processingunit (MPU) 1100, an interface unit 1300, a display 1400, and a solidstate drive (SSD) 3000.

In some cases, the DRAM 1000, the MPU 1100, and the SSD 3000 areprovided in the form of a package or integrated to a chip. This may meanthat the DRAM 1000 and the SSD (e.g., flash memory) 3000 are embedded inthe mobile device.

If the mobile device is a portable communications device, the interfaceunit 1300 is connected to a modem and transceiver block which isconfigured to perform a communication data transmitting and receivingfunction and a data modulating and demodulating function.

The MPU 1100 controls an overall operation of the mobile deviceaccording to a given program.

The DRAM 1000 is connected to the MPU 1100, and functions as a buffermemory or a main memory of the MPU 1100. The DRAM 1000 includes a clockpath unit having a delay locked loop circuit like that shown in FIG. 1and a command path unit operating independently from the clock pathunit. Therefore, the delay locked loop circuit is powered off during astandby operation or an access operation. Thus, power consumption of theDRAM 1000 is minimized or reduced. In addition, a jitter-robust and fastupdate operation is executed by deciding an optimal update period of thedelay locked loop circuit. Thus, the reliability of the mobile deviceincluding the DRAM 1000 is increased and power consumption is reduced.

The SSD 3000 includes a NOR or NAND flash memory.

The display 1400 has a liquid crystal having a backlight, a liquidcrystal having a light emitting diode (LED) light source, or a touchscreen (e.g., organic light emitting diode (OLED)). The display 1400 isused as an output device for displaying images (e.g., characters,numbers, pictures, etc.) in color.

The present embodiment of the inventive concept is described underassumption that the mobile device is a mobile communications device. Insome cases, the mobile device may function as a smart card by adding orremoving components to or from the mobile device.

In the case of the mobile device, a separate interface is connected toan external communications device. The external communications device isa DVD player, a computer, a set top box (STB), a game machine, a digitalcamcorder, or the like.

Although not shown in FIG. 10, the mobile device may further include anapplication chipset, a camera image processor (CIS), a mobile DRAM, etc.

Chips forming the mobile device may be packed using various packagessuch as Package on Package (PoP), Ball grid arrays (BGAs), Chip scalepackages (CSPs), Plastic Leaded Chip Carrier (PLCC), Plastic DualIn-Line Package (PDIP), Die in Waffle Pack, Die in Wafer Form, Chip OnBoard (COB), Ceramic Dual In-Line Package (CERDIP), Plastic Metric QuadFlat Pack (MQFP), Thin Quad Flatpack (TQFP), Small Outline IntegratedCircuit (SOIC), Shrink Small Outline Package (SSOP), Thin Small OutlinePackage (TSOP), System In Package (SIP), Multi Chip Package (MCP),Wafer-level Fabricated Package (WFP), Wafer-Level Processed StackPackage (WSP), etc.

In FIG. 10, there is illustrated an example in which a flash memory isused. However, a variety of nonvolatile storages may be used.

The nonvolatile storage may store data information having various dataformats such as text, graphics, software code, etc.

The nonvolatile storage may be formed of Electrically ErasableProgrammable Read-Only Memory (EEPROM), flash memory, Magnetic RAM(MRAM), Spin-Transfer Torque MRAM (STT-MRAM), Conductive bridging RAM(CBRAM), Ferroelectric RAM (FeRAM), Phase change RAM (PRAM) such asOvonic Unified Memory (OUM), Resistive RAM (RRAM or ReRAM), nanotubeRRAM, Polymer RAM (PoRAM), Nano Floating Gate Memory (NFGM), holographicmemory, a molecular electronics memory device, or insulator resistancechange memory.

FIG. 11 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to an optical input/output (I/O) scheme.

Referring to FIG. 11, a memory system 30 adopting a high-speed opticalI/O scheme includes a chipset 40 as a controller and memory modules 50and 60 mounted on a printed circuit board (PCB) substrate 31. The memorymodules 50 and 60 are inserted in slots 35_1 and 35_2 installed on thePCB substrate 31. The memory module 50 includes a connector 57, DRAMmemory chips 55_1 to 55 _(—) n, an optical I/O input unit 51, and anoptical I/O output unit 53. The memory module 60 includes DRAM memorychips 65_1 to 65 _(—) n, an optical I/O input unit 51′, and an opticalI/O output unit 53′.

The optical I/O input unit 51/51′ includes a photoelectric conversionelement (e.g., a photodiode) to convert an input optical signal into anelectrical signal. The electrical signal output from the photoelectricconversion element is received by the memory module 50/60. The opticalI/O output unit 53153 includes an electro-photic conversion element(e.g., a laser diode) to convert an electrical signal output from thememory module 50/60 into an optical signal. In some cases, the opticalI/O output unit 53/53′ further includes an optical modulator to modulatea signal output from a light source.

An optical cable 33/34 performs a role of optical communications betweenthe optical I/O input unit 51/51′ of the memory module 50/50 and anoptical transmission unit 41_1/41_2 of the chipset 40. The opticalcommunications may have a bandwidth (e.g., more than 20 gigabits persecond). The memory module 50 receives signals or data from signal lines37 and 39 of the chipset 40 through the connector 57, and performshigh-speed data communications with the chipset 40 through the opticalcable 33. Further, resistors Rtm installed at lines 37 and 39 aretermination resistors.

The DRAM memory chips 55_1 to 55 _(—) n and 65_11 to 65 _(—) n accordingto an exemplary embodiment of the inventive concept may be applied tothe memory system 30 with the optical I/O structure of FIG. 11.

In the memory system 30, each of the DRAM memory chips 55_1 to 55 n and651 to 65 n includes a clock path unit having a delay locked loopcircuit like that shown in FIG. 1 or FIG. 6 and a command path unitoperating independently from the clock path unit. Therefore, the delaylocked loop circuit is powered off during a standby operation or anaccess operation. Thus, power consumption of the memory system 30 isminimized or reduced. In addition, a jitter-robust and fast updateoperation is executed by deciding an optimal update period of the delaylocked loop circuit. Thus, the performance of the mobile device 30including the DRAM memory chips 55_1 to 55 _(—) n and 65_1 to 65 _(—) nis increased.

In FIG. 11 the chipset 40 includes a concentration access detectingunit. The concentration access detecting unit may generate aconcentration access detection signal when an input frequency of afrequently applied address exceeds a threshold value.

When the concentration access detection signal is generated, the chipset40 prevents or alleviates corruption of data of memory cells adjacent toa specific memory area.

For example, if a specific word line, bit line or memory block of avolatile semiconductor memory (e.g., DRAM) is intensively accessed,corruption of cell data may be caused. In other words, cell data ofmemory cells of word lines adjacent to a specific word line, bit linesadjacent to a specific bit line, or a memory block adjacent to aspecific memory block are lost due to concentrated access.

In the case that the DRAM memory chips 55_1 to 55 _(—) n and 65_1 to 65_(—) n of the memory modules 50 and 60 are accessed by a memory pageunit, a column unit or a bank unit, the concentration access detectingunit may monitor access concentration.

In the case that the memory system 30 of FIG. 11 is an SSD, the DRAMmemory chips 55_1 to 55 _(—) n and 65_1 to 65 _(—) n may be used as auser data buffer.

FIG. 12 is a diagram illustrating an exemplary embodiment of theinventive concept applied to a through-silicon via (TSV).

Referring to a stack type memory device 500 in FIG. 12, a plurality ofmemory chips 520, 530, 540, and 550 is stacked on an interface chip 510in a vertical direction. Herein, a plurality of TSVs 560 is formed topenetrate the memory chips 520, 530, 540, and 550. Mass data is storedin the three-dimensional stack package type memory device 500 includingthe memory chips 520, 530, 540, and 550 stacked on the interface chip510 in a vertical direction. In addition, the three-dimensional stackpackage type memory device 500 has characteristics such as high speed,low power and scale-down.

In the case of the stack type memory device 500 of FIG. 12, theinterface chip 510 includes a concentration access detecting unit 210,so that corruption of data (e.g., DRAM data) in the memory chips 520,530, 540, and 550 is prevented or alleviated.

The stack type memory device 500 shown in FIG. 12 includes DRAMsaccording to an exemplary embodiment of the inventive concept. Thus, aDRAM constituting the plurality of memory chips 520, 530, 540, and 550includes a clock path unit having a delay locked loop circuit like thatshown in FIG. 1 or FIG. 6 and a command path unit operatingindependently from the clock path unit. Therefore, the delay locked loopcircuit is powered off during a standby operation or an accessoperation. Thus, power consumption of the memory device 500 is minimizedor reduced. In addition, a jitter-robust and fast update operation isexecuted by deciding an optimal update period of the delay locked loopcircuit.

FIG. 13 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to an electronic system. As illustrated inFIG. 13, an electronic system includes an input device 3100, an outputdevice 3300, a processor 3200, and a memory device 3400. The memorydevice 3400 includes a DRAM 1000. In addition, note that the DRAM 1000can be integrated in one of the input device 3100, the output device3300, and the processor 3200.

In the case of FIG. 13, the DRAM 1000 includes a clock path unit havinga delay locked loop circuit like that shown in FIG. 1 and a command pathunit operating independently from the clock path unit. Therefore, thedelay locked loop circuit is powered off during a standby operation oran access operation. Thus, power consumption of an electronic system isminimized or reduced. In addition, a jitter-robust and fast updateoperation is executed by deciding an optimal update period of the delaylocked loop circuit. Thus, the reliability of the electronic systemincluding the DRAM 1000 is increased and power consumption is reduced.

FIG. 14 is a diagram illustrating a semiconductor wafer according to anexemplary embodiment of the inventive concept.

Referring to FIG. 14, a memory device 1000 (e.g., a DRAM) including adelay locked loop circuit 1003 and another circuit component 300 isfabricated on a semiconductor wafer 1300. The memory device 1000 can befabricated on a variety of semiconductor substrates.

As described above, since the memory device 1000 includes the delaylocked loop circuit and a command path unit, the delay locked loopcircuit is powered off during a standby operation or an accessoperation. Thus, power consumption is minimized or reduced. In addition,a jitter-robust and fast update operation is executed by deciding anoptimal update period of the delay locked loop circuit.

FIG. 15 is a block diagram illustrating an exemplary embodiment of theinventive concept applied to a portable device.

Referring to FIG. 15, a portable device functions as a smart phone andincludes a multi-port DRAM 110, a first processor 210, a secondprocessor 310, a display unit 420, a user interface 510, a camera unit600, and a modem 700.

The multi-port DRAM 110 has three ports respectively connected to firstto third buses B10, B20, and B22, and is connected to the first andsecond processors 210 and 310. The first port of the multi-port DRAM 110is connected to the first processor 210 (e.g., a baseband processor)through the first bus B10. The second port of the multi-port DRAM 110 isconnected to the second processor 310 (e.g., an application processor)through the second bus B20.

In addition, the third port of the multi-port DRAM 110 is connected tothe second processor 310 through the third bus B22.

Thus, the multi-port DRAM 110 may replace one storage memory and twoDRAMs. The multi-port DRAM 110 can be implemented by a semiconductormemory device configured as illustrated in FIG. 1.

The multi-port DRAM 110 of FIG. 15 includes three ports to perform rolesof a DRAM and a flash memory. In this case, the multi-port DRAM 110operates as a DRAM interface, so that it replaces two DRAMs.

The multi-port DRAM 110 has an operation range and an operation voltagethat SDRAM DDR4 requires.

The multi-port DRAM 110 includes a delay locked loop circuit and acommand path unit, so that the delay locked loop circuit is powered offduring a standby operation or an access operation. Thus, powerconsumption is minimized or reduced.

An interface of the first bus B10 may be a volatile memory interface,and the first port of the multi-port DRAM 110 may receive first packetdata generated from the first processor 210 to transfer it to aninternal circuit block of the multi-port DRAM 110. In addition, thefirst port of the mufti-port DRAM 110 may provide first data of themulti-port DRAM 110 to the first processor 210. In this case, the firstdata may be parallel data.

An interface of the third bus B22 may be a volatile memory interface,and the third port of the multi-port DRAM 110 may receive third packetdata generated from the second processor 310 to transfer it to aninternal circuit block of the multi-port DRAM 110. In addition, thethird port of the multi-port DRAM 110 may provide third data of themulti-port DRAM 110 to the second processor 310.

An interface of the second bus B20 may be a nonvolatile memory (e.g., aNAND flash) interface, and the second port of the multi-port DRAM 110may receive second packet data generated from the second processor 310to transfer it to an internal circuit block of the multi-port DRAM 110.In addition, the second port of the multi-port DRAM 110 may providesecond data of the multi-port DRAM 110 to the second processor 310. Inthis case, the second data may be serial data or parallel data.

An interface of the buses B10, B20 and B22 may implement an interfaceprotocol such as Universal Serial Bus (USB), Multi-Media Card (MMC),Peripheral Component Interconnect-Express (PCIE), Serial-attached SCSI(SAS). Serial Advanced Technology Attachment (SATA), Parallel AdvancedTechnology Attachment (PATA), Small Computer System Interface (SCSI),Enhanced Small Disk Interface (ESDI), and Integrated Drive Electronics(IDE).

In some cases, the first and second processors 210 and 310 and the DRAM110 may be integrated to a chip or packaged. In the case of FIG. 15, theDRAM 110 may be embedded in the portable device.

In the event that the portable device is a smart phone, the firstprocessor 210 is connected to the modem 700 that transmits and receivescommunications data and modulates and demodulates data.

A NOR or NAND flash memory may be additionally connected to the firstprocessor 210 or the second processor 310 to store mass information.

The display unit 420 may have a liquid crystal having a backlight, aliquid crystal having an LED light source, or a touch screen (e.g.,OLED). The display unit 420 may be an output device for displayingimages (e.g., characters, numbers, pictures, etc.) in color.

There is described an example in which the portable device is a smartphone. In some cases, the portable device may be used as a smart card byadding or removing components.

The portable device may be connected to an external communicationsdevice through a separate interface. The communications device may be aDVD player, a computer, an STB, a game machine, a digital camcorder, orthe like.

The camera unit 600 may include a camera image processor (CIS), and maybe connected to the second processor 310.

Although not shown in FIG. 15, the portable device may further includean application chipset, a CIS, a mobile DRAM, and so on.

In FIG. 15, there is illustrated an example in which a DRAM is installedat the portable device. However, a variety of nonvolatile memories maybe used instead of the DRAM.

The nonvolatile memory may store various types of data information suchas texts, graphics, software codes, etc.

While the inventive concept has been described with reference toexemplary embodiments thereof, it will be understood by one of ordinaryskill in the art that various changes and modifications may be madetherein without departing from the spirit and scope of the inventiveconcept as defined by the claims. Therefore, it should be understoodthat the above embodiments are not limiting, but illustrative. Forexample, various changes and modifications to the circuit configurationor arrangement of a clock path unit including a delay locked loopcircuit and a clock path unit operating independently from the clockpath unit may be made without departing from the spirit and scope of thepresent inventive concept. In addition, the inventive concept isdescribed using a DRAM including DRAM memory cells. However, theinventive concept is applicable to another semiconductor memory devicesuch as an MRAM having a delay locked loop circuit.

1. An operation control method of a semiconductor memory device,comprising: executing a Delay Locked Loop (DLL) locking in response to aDLL reset signal; measuring a loop delay of a DLL; storing measured loopdelay information and DLL locking information; performing a delaycontrol of a command path using the stored loop delay information andDLL locking information independent of the DLL, during a latency controloperation.
 2. The operation control method of claim 1, wherein the DLLcomprises a clock path, wherein the command path and the clock path aredriven independently from each other.
 3. The operation control method ofclaim 1, wherein the loop delay information is used to determine anadditive delay of an additive delay line included in the command path.4. The operation control method of claim 3, wherein the DLL lockinginformation is used to determine a DLL delay of a delay line replicathat is connected to an output of the additive delay line and whereinthe delay line replica has the same delay as that of a delay line of theDLL.
 5. The operation control method of claim 3, wherein a latency valueapplied through the command path is used to determine the additivedelay.
 6. The operation control method of claim 3, wherein the loopdelay is measured by counting a feedback clock applied to a phasedetector of the DLL within an interval.
 7. The operation control methodof claim 6, wherein a number of rising edges of the feedback clock arecounted.
 8. An operation control method of a semiconductor memorydevice, comprising: executing a Delay Locked Loop (DLL) locking inresponse to a DLL reset signal; measuring a loop delay of a DLL; storingmeasured loop delay information and DLL locking information; during anOn-Die Termination (ODT) control operation, performing a delay controlof a command path using the stored loop delay information and DLLlocking information when the DLL is off.
 9. The operation control methodof claim 8, wherein the DLL reset signal is applied at a power-up of asemiconductor memory device.
 10. The operation control method of claim8, wherein the ODT control operation is performed when a latency commandis received.
 11. The operation control method of claim 8, wherein theloop delay is measured by counting a result obtained by comparing afeedback clock of the DLL and an input clock of a DLL delay line withinan interval.
 12. The operation control method of claim 11, wherein anumber of falling edges of the feedback clock are counted.
 13. Theoperation control method of claim 8, wherein the loop delay informationis used to determine an additive delay of an additive delay lineincluded in the command path, together with an ODT control value appliedthrough the command path.
 14. The operation control method of claim 13,wherein the DLL locking information is used to determine a DLL delay ofa delay line replica that is connected to an output of the additivedelay line and wherein the delay line replica has the same delay as thatof a delay line of the DLL.
 15. A semiconductor memory device,comprising: a Delay Locked Loop (DLL) configured to execute a DLLlocking at a DLL reset; a DLL control part configured to control the DLLand store DLL locking information at the DLL locking; a loop delaymeasure circuit configured to measure and store a loop delay of the DLL;and a command path unit including an additive delay line configured todetermine an additive delay in response to the loop delay information,and a delay line replica having the same delay as that of a delay lineof the DLL and configured to determine a DLL line delay in response tothe DLL locking information, wherein during a latency control operation,a delay control of the command path unit is performed using the storedloop delay information and DLL locking information independent of theDLL.
 16. The semiconductor memory device of claim 15, wherein the DLLcomprises: a DLL delay line configured to delay an input clock accordingto a delay selection signal; a data output buffer replica having thesame delay as a delay of a data output buffer and configured to receivean output clock of the DLL delay line; a clock buffer replica having thesame delay as a delay of a clock buffer and configured to receive anoutput buffer clock from the data output buffer replica; and a phasedetector configured to generate a phase error detection signal bycomparing the input clock with a feedback clock from the clock bufferreplica.
 17. The semiconductor memory device of claim 16, wherein theDLL control part controls the DLL in response to the phase errordetection signal and latches the delay selection signal as the DLLlocking information at the DLL locking.
 18. The semiconductor memorydevice of claim 16, wherein the loop delay measure circuit measures theloop delay of the DLL by counting a result obtained by comparing thefeedback clock and the input clock within an interval.
 19. Thesemiconductor memory device of claim 16, wherein the loop delay measurecircuit comprises: a counting circuit configured to count a resultobtained by comparing the feedback clock and the input clock within aninterval; a decoder configured to decode the count result; and an adderconfigured to generate the additive delay information using a decodingoutput value of the decoder and a latency value.
 20. The semiconductormemory device of claim 19, wherein the command path unit furthercomprises: a command buffer; and a command decoder connected between thecommand buffer and the additive delay line. 21-30. (canceled)